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Nonequilibrium phenomena in bilayer electron systems

Shevyrin, Andrey; See, Patrick; Farrer, Ian; Ritchie, David; Griffiths, Jonathan; Jones, Geraint; Kumar, Sanjeev; (2023) Nonequilibrium phenomena in bilayer electron systems. Physical Review B: Condensed Matter and Materials Physics , 107 , Article L041302. 10.1103/PhysRevB.107.L041302. Green open access

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Abstract

In the present Letter, we have used magnetocapacitance and magnetoresistance measurements to investigate nonequilibrium phenomena in a bilayer electron system based on GaAs/AlGaAs heterostructures. The magnetic field ramping drives the bilayer electron system out of equilibrium, leading to magnetoresistance hysteresis and spikes. Unlike magnetoresistance, magnetocapacitance results intriguingly show hysteresis even when both layers are in the quantum Hall state. The hysteresis is accompanied by interlayer charge transfer, but the disequilibrium is not limited to interlayer imbalance. Results show that the edge-bulk imbalance can be the initial ground for the appearance of hysteresis. In addition, the nonequilibrium states are observed in which the total, rather than individual, layer densities determine the magnetic field and gate voltage dependencies.

Type: Article
Title: Nonequilibrium phenomena in bilayer electron systems
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevB.107.L041302
Publisher version: https://doi.org/10.1103/PhysRevB.107.L041302
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher's terms and conditions.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10163339
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