Farmer, J;
Whitehead, W;
Hall, A;
Veksler, D;
Bersuker, G;
Gao, D;
El-Sayed, A-M;
... Sen, R; + view all
(2021)
Mitigating switching variability in carbon nanotube memristors.
In:
Proceedings of the IEEE International Reliability Physics Symposium (IRPS) 2021.
Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
Root-cause of instability in carbon nanotubes memristors is analyzed employing ultra-short pulse technique in combination with atomic-level material modeling. Separating various factors affecting switching operations allowed to identify structural features and operational conditions leading to improved cell characteristics.
| Type: | Proceedings paper |
|---|---|
| Title: | Mitigating switching variability in carbon nanotube memristors |
| Event: | IEEE International Reliability Physics Symposium (IRPS) |
| Location: | Monterey (CA), USA |
| Dates: | 21st-25th March 2021 |
| ISBN-13: | 978-1-7281-6893-7 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/IRPS46558.2021.9405123 |
| Publisher version: | https://doi.org/10.1109/IRPS46558.2021.9405123 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher's terms and conditions. |
| Keywords: | Atomic measurements, Neuromorphics, Computational modeling, Memristors, Switches, Carbon nanotubes, Conductivity |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10134940 |
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