Büschges, MI;
Hoffmann, RC;
Regoutz, A;
Schlueter, C;
Schneider, JJ;
(2021)
Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, their characterization and Transistor Performance under Illumination.
Chemistry
, 27
(38)
pp. 9791-9800.
10.1002/chem.202101126.
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Abstract
Multilayered heterostructures comprising of In 2 O 3, SnO 2, and Al 2 O 3 were studied for their application in thin-film transistors (TFT). The compositional influence of tin oxide on the properties of the thin-film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200°C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post-deposition annealing at 400°C the thin-films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al 2 O 3 in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In 2 O 3 /SnO 2 /Al 2 O 3 are incorporated into TFT devices, exhibiting a saturation field-effect mobility (µ sat ) of 2.0 cm 2 ·V -1 s -1, a threshold-voltage (V th ) of 8.6 V, a high current on/off ratio (I On /I Off ) of 1.0·10 7, and a subthreshold swing (SS) of 485 mV·dec -1. The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm).
| Type: | Article |
|---|---|
| Title: | Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, their characterization and Transistor Performance under Illumination. |
| Location: | Germany |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1002/chem.202101126 |
| Publisher version: | https://doi.org/10.1002/chem.202101126 |
| Language: | English |
| Additional information: | Copyright © 2021 The Authors. Chemistry - A European Journal published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License (http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made. |
| Keywords: | Thin-film transistor, heterostructure, atomic layer deposition, indium oxide, tin oxide, aluminum oxide |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10128388 |
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