Duan, J;
Lehtinen, JS;
Fogarty, MA;
Schaal, S;
Lam, MML;
Ronzani, A;
Shchepetov, A;
... Morton, JJL; + view all
(2021)
Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire.
Applied Physics Letters
, 118
(16)
10.1063/5.0040259.
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Abstract
We report on ambipolar gate-defined quantum dots in silicon on insulator nanowires fabricated using a customized complementary metal–oxide–semiconductor process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilize the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition (IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160 (100) μs for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable hole spins in silicon. We thank Gavin Dold and Oscar Kennedy for support and helpful discussions in the fabrication of superconducting inductors. The authors gratefully acknowledge the financial support from the European Union's Horizon 2020 research and innovation programme under Grant Agreement Nos. 688539 (http://mos-quito.eu) and 766853 (http://www.efined-h2020.eu/), as well as the Engineering and Physical Sciences Research Council (EPSRC) through the Centre for Doctoral Training in Delivering Quantum Technologies (No. EP/L015242/1), QUES2T (No. EP/N015118/1), the Hub in Quantum Computing and Simulation (No. EP/T001062/1) and Academy of Finland project QuMOS (Project Nos. 288907 and 287768) and Center of Excellence program Project No. 312294.
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