Ciriano-Tejel, VN; Fogarty, MA; Schaal, S; Hutin, L; Bertrand, B; Ibberson, L; Gonzalez-Zalba, MF; ... Morton, JJL; + view all Ciriano-Tejel, VN; Fogarty, MA; Schaal, S; Hutin, L; Bertrand, B; Ibberson, L; Gonzalez-Zalba, MF; Li, J; Niquet, Y-M; Vinet, M; Morton, JJL; - view fewer (2021) Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling. PRX Quantum , 2 , Article 010353. 10.1103/PRXQuantum.2.010353.

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Abstract

Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures.

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