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Photo-induced enhanced Raman spectroscopy (PIERS): Sensing atomic-defects, explosives and biomolecules

Glass, D; Cortés, E; Ben-Jaber, S; Brick, T; Quesada-Cabrera, R; Peveler, WJ; Zhu, Y; ... Maier, SA; + view all (2019) Photo-induced enhanced Raman spectroscopy (PIERS): Sensing atomic-defects, explosives and biomolecules. In: Proceedings of SPIE - The International Society for Optical Engineering. (pp. 110100D). SPIE: Baltimore, Ma, USA. Green open access

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Abstract

Enhanced Raman relies heavily on finding ideal hot-spot regions which enable significant enhancement factors. In addition, the termed “chemical enhancement” aspect of SERS is often neglected due to its relatively low enhancement factors, in comparison to those of electromagnetic (EM) nature. Using a metal-semiconductor hybrid system, with the addition of induced surface oxygen vacancy defects, both EM and chemical enhancement pathways can be utilized on cheap reusable surfaces. Two metal-oxide semiconductor thin films, WO3 and TiO2, were used as a platform for investigating size dependent effects of Au nanoparticles (NPs) for SERS (surface enhanced Raman spectroscopy) and PIERS (photo-induced enhanced Raman spectroscopy – UV pre-irradiation for additional chemical enhancement) detection applications. A set concentration of spherical Au NPs (5, 50, 100 and 150 nm in diameter) was drop-cast on preirradiated metal-oxide substrates. Using 4-mercaptobenzoic acid (MBA) as a Raman reporter molecule, a significant dependence on the size of nanoparticle was found. The greatest surface coverage and ideal distribution of AuNPs was found for the 50 nm particles during SERS tests, resulting in a high probability of finding an ideal hot-spot region. However, more significantly a strong dependence on nanoparticle size was also found for PIERS measurements – completely independent of AuNP distribution and orientation affects – where 50 nm particles were also found to generate the largest PIERS enhancement. The position of the analyte molecule with respect to the metal-semiconductor interface and position of generated oxygen vacancies within the hot-spot regions was presented as an explanation for this result.

Type: Proceedings paper
Title: Photo-induced enhanced Raman spectroscopy (PIERS): Sensing atomic-defects, explosives and biomolecules
Event: Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XX
ISBN-13: 9781510626850
Open access status: An open access version is available from UCL Discovery
DOI: 10.1117/12.2518948
Publisher version: https://doi.org/10.1117/12.2518948
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: SERS (surface enhanced Raman spectroscopy), PIERS, oxygen vacancy defects, metal oxide, chemical sensing, enhanced detection
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry
URI: https://discovery.ucl.ac.uk/id/eprint/10082857
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