Deng, Z;
Guo, D;
Huang, J;
Liu, H;
Wu, J;
Chen, B;
(2019)
Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p Design Grown on GaAs Substrate.
IEEE Journal of Quantum Electronics
, 55
(4)
, Article 4000205. 10.1109/JQE.2019.2917946.
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Abstract
In this paper, we report the direct growth and characterization of a mid-wave infrared InAs/GaSb type-II superlattice n-B-p photodetector on a GaAs substrate. The design consists of an n-doped contact, a wide bandgap unipolar barrier, and a p-doped absorber, which uses photogenerated electron as minority carriers to enjoy the longer electron diffusion length compared with hole diffusion length. At 77 K, the device exhibits a dark current density of 2.9 × 10 -5 A/cm 2 under -0.1 V and a zero-bias differential-resistance-area product (R 0 A) in excess of 8 × 103 Ω · cm 2 . Arrhenius analysis of dark current demonstrates that the dominant mechanism is diffusion at a temperature higher than 130 K. 50% cutoff wavelength of the detector is found at 6.4 μm at 77 K under zero bias, with a peak responsivity of 0.56 A/W. The corresponding specific detectivity is 7.6 × 10 11 cm · Hz 1/2 /W. The key device parameters which limit the further optimization of performance are discussed.
| Type: | Article |
|---|---|
| Title: | Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector With n-B-p Design Grown on GaAs Substrate |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/JQE.2019.2917946 |
| Publisher version: | https://doi.org/10.1109/JQE.2019.2917946 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Dark current, Substrates, Gallium arsenide, Temperature measurement, Detectors, Temperature distribution, Superlattices |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10081130 |
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