Hantschmann, C;
Vasil'ev, PP;
Chen, SM;
Liao, M;
Seeds, AJ;
Liu, H;
Penty, RV;
(2018)
Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon.
In:
Proceedings of the 2018 IEEE International Semiconductor Laser Conference (ISLC).
(pp. pp. 139-140).
IEEE: Danvers (MA), USA.
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Abstract
Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor.
| Type: | Proceedings paper |
|---|---|
| Title: | Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon |
| Event: | 26th IEEE International Conference on Semiconductor Laser (ISLC) |
| Location: | Sante Fe (NM), USA |
| Dates: | 16th-17th September 2018 |
| ISBN-13: | 978-1-5386-6486-5 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/ISLC.2018.8516205 |
| Publisher version: | https://doi.org/10.1109/ISLC.2018.8516205 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Quantum dot lasers, Modulation, Silicon, Bandwidth, Resonant frequency, Photonics |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10067505 |
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