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Radio-Frequency Capacitive Gate-Based Sensing

Ahmed, I; Haigh, JA; Schaal, S; Barraud, S; Zhu, Y; Lee, CM; Amado, M; ... Gonzalez-Zalba, MF; + view all (2018) Radio-Frequency Capacitive Gate-Based Sensing. Physical Review Applied , 10 (1) , Article 014018. 10.1103/PhysRevApplied.10.014018. Green open access

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Abstract

Developing fast, accurate, and scalable techniques for quantum-state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is placed in parallel with a superconducting spiral inductor resulting in resonators with loaded Q factors in the 400-800 range. We utilize resonators operating at 330 and 616 MHz, and achieve charge sensitivities of 7.7 and 1.3μe/Hz, respectively. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing on a par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum-state readout.

Type: Article
Title: Radio-Frequency Capacitive Gate-Based Sensing
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevApplied.10.014018
Publisher version: http://dx.doi.org/10.1103/PhysRevApplied.10.014018
Language: English
Additional information: This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Electronics, Quantum Information, Semiconductor Physics
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: https://discovery.ucl.ac.uk/id/eprint/10053854
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