Wang, J;
Hu, H;
Yin, H;
Bai, Y;
Li, J;
Wei, X;
Liu, Y;
... Liu, H; + view all
(2018)
1.3 mu m InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers.
Photonics Research
, 6
(4)
pp. 321-325.
10.1364/PRJ.6.000321.
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Abstract
We report on the first electrically pumped continuous-wave (CW) InAs/GaAs quantum dot (QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga0.51In0.49PGa0.51In0.49P upper cladding layer and an Al0.53Ga0.47AsAl0.53Ga0.47As lower cladding layer was directly grown on Si by metal–organic chemical vapor deposition. It demonstrates the postgrowth annealing effect on the QDs was relieved enough with the GaInP upper cladding layer grown at a low temperature of 550°C. Broad-stripe edge-emitting lasers with 2-mm cavity length and 15-μm stripe width were fabricated and characterized. Under CW operation, room-temperature lasing at ∼1.3 μm∼1.3 μm has been achieved with a threshold density of 737 A/cm2737 A/cm2 and a single-facet output power of 21.8 mW.
| Type: | Article |
|---|---|
| Title: | 1.3 mu m InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1364/PRJ.6.000321 |
| Publisher version: | http://doi.org/10.1364/PRJ.6.000321 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10048706 |
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