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Elevated temperature lasing from injection microdisk lasers on silicon

Kryzhanovskaya, NV; Moiseev, EI; Polubavkina, YS; Maximov, MV; Mokhov, DV; Morozov, IA; Kulagina, MM; ... Zhukov, AE; + view all (2018) Elevated temperature lasing from injection microdisk lasers on silicon. Laser Physics Letters , 15 (1) , Article 015802. 10.1088/1612-202X/aa9306. Green open access

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Abstract

The combination of high operation temperatures and small diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this letter, results are presented for quantum dot III–V-on-Si microdisk diode lasers tested at elevated temperatures. To the best of our knowledge, we have demonstrated the first uncooled microlasers with diameter of 30 µm capable of operating in the continuous wave regime at 60 °C. In the lasing regime, the emission spectra contain one very intense line with a full-width at half-maximum of 30 pm; the side mode suppression ratio reaches 18 dB. Because of self-heating, the actual temperature of the active region is close to 100 °C. Under pulsed excitation, the maximal lasing temperature is 110 °C.

Type: Article
Title: Elevated temperature lasing from injection microdisk lasers on silicon
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/1612-202X/aa9306
Publisher version: http://dx.doi.org/10.1088/1612-202X/aa9306
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Physical Sciences, Optics, Physics, Applied, Physics, microdisk lasers, quantum dots, silicon, QUANTUM-DOT LASERS, 1.3 MU-M, SI SUBSTRATE, PERFORMANCE, THRESHOLD
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/10044513
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