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ELECTRONIC STRUCTURE OF ISOLATED SINGLE VACANCY CENTRES IN SILICON CARBIDE

LARKINS, FP; STONEHAM, AM; (1970) ELECTRONIC STRUCTURE OF ISOLATED SINGLE VACANCY CENTRES IN SILICON CARBIDE. J PHYS PART C SOLID , 3 (6) L112 - L113. 10.1088/0022-3719/3/6/025. Green open access

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Abstract

The lowest electronic levels of the various charged states of the isolated carbon and silicon single vacancies in silicon carbide have been calculated using the defect molecule approach with lattice distortion.

Type: Article
Title: ELECTRONIC STRUCTURE OF ISOLATED SINGLE VACANCY CENTRES IN SILICON CARBIDE
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0022-3719/3/6/025
Publisher version: http://dx.doi.org/10.1088/0022-3719/3/6/025
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/59786
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