LARKINS, FP;
STONEHAM, AM;
(1970)
ELECTRONIC STRUCTURE OF ISOLATED SINGLE VACANCY CENTRES IN SILICON CARBIDE.
J PHYS PART C SOLID
, 3
(6)
L112 - L113.
10.1088/0022-3719/3/6/025.
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Abstract
The lowest electronic levels of the various charged states of the isolated carbon and silicon single vacancies in silicon carbide have been calculated using the defect molecule approach with lattice distortion.
| Type: | Article |
|---|---|
| Title: | ELECTRONIC STRUCTURE OF ISOLATED SINGLE VACANCY CENTRES IN SILICON CARBIDE |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0022-3719/3/6/025 |
| Publisher version: | http://dx.doi.org/10.1088/0022-3719/3/6/025 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/59786 |
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