UCL Discovery
UCL home » Library Services » Electronic resources » UCL Discovery

Dopant activation mechanism of Bi wire- δ -doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory

Murata, K; Kirkham, C; Shimomura, M; Nitta, K; Uruga, T; Terada, Y; Nittoh, K-I; ... Miki, K; + view all (2017) Dopant activation mechanism of Bi wire- δ -doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory. Journal of Physics: Condensed Matter , 29 (15) , Article 155001. 10.1088/1361-648X/aa6180. Green open access

[thumbnail of Bowler_ver20.pdf]
Preview
Text
Bowler_ver20.pdf - Accepted Version

Download (955kB) | Preview
[thumbnail of Bowler_ver20_sup.pdf]
Preview
Text
Bowler_ver20_sup.pdf - Accepted Version

Download (281kB) | Preview

Abstract

We successfully characterized the local structures of Bi atoms in a wire-δ-doped layer (1/8 ML) in a Si crystal, using wavelength dispersive fluorescence x-ray absorption fine structure at the beamline BL37XU, in SPring-8, with the help of density functional theory calculations. It was found that the burial of Bi nanolines on the Si(0 0 1) surface, via growth of Si capping layer at 400 °C by molecular beam epitaxy, reduced the Bi-Si bond length from to Å. We infer that following epitaxial growth the Bi-Bi dimers of the nanoline are broken, and the Bi atoms are located at substitutional sites within the Si crystal, leading to the shorter Bi-Si bond lengths.

Type: Article
Title: Dopant activation mechanism of Bi wire- δ -doping into Si crystal, investigated with wavelength dispersive fluorescence x-ray absorption fine structure and density functional theory
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/1361-648X/aa6180
Publisher version: https://doi.org/10.1088/1361-648X/aa6180
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Silicon, doping, XAFS, epitaxy
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy
URI: https://discovery.ucl.ac.uk/id/eprint/1548970
Downloads since deposit
0Downloads
Download activity - last month
Download activity - last 12 months
Downloads by country - last 12 months

Archive Staff Only

View Item View Item