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Dislocation-induced birefringence in CaF2 for lithography optics

Stoneham, AM; (2002) Dislocation-induced birefringence in CaF2 for lithography optics. SEMICOND SCI TECH , 17 (5) L15 - L16. 10.1088/0268-1242/17/5/101. Green open access

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Abstract

Internal strain fields due to dislocations will cause birefringence in crystals such as CaF2. This birefringence will exceed levels considered acceptable for 157 nm lithography unless essentially all dislocations can be eliminated.

Type: Article
Title: Dislocation-induced birefringence in CaF2 for lithography optics
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0268-1242/17/5/101
Publisher version: http://dx.doi.org/10.1088/0268-1242/17/5/101
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
Keywords: SCATTERING LOSSES, LIGHT-SCATTERING, FIBER MATERIALS, RESONANCE, CRYSTALS, SHAPES, LINES
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/129089
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