Schofield, SR;
Curson, NJ;
Simmons, MY;
Ruess, FJ;
Hallam, T;
Oberbeck, L;
Clark, RG;
(2003)
Atomically precise placement of single dopants in Si.
PHYS REV LETT
, 91
(13)
, Article 136104. 10.1103/PhysRevLett.91.136104.