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NONRADIATIVE-TRANSITIONS IN SEMICONDUCTORS

STONEHAM, AM; (1981) NONRADIATIVE-TRANSITIONS IN SEMICONDUCTORS. REP PROG PHYS , 44 (12) 1251 - 1295. 10.1088/0034-4885/44/12/001. Green open access

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Abstract

Non-radiative transitions affect many aspects of semiconductor performance. Normally they reduce device efficiency by suppressing luminescence, creating defects, reducing carrier lifetimes, or enhancing diffusion during operation. The present review surveys both the theoretical and practical understanding of non-radiative transitions. It includes general theoretical results and the associated ideas, with the emphasis on phonon-induced and defect Auger processes. Most of the purely formal aspects are omitted, but the points of principle where uncertainties remain are discussed. The review also covers the relation between basic theoretical studies and practical applied work on device degradation. This includes a description of the atomic processes involved in the more important mechanism of device deterioration and the theoretical understanding of the mechanism of these underlying processes. Finally, there is a survey of models proposed for 'killer' centres.

Type: Article
Title: NONRADIATIVE-TRANSITIONS IN SEMICONDUCTORS
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0034-4885/44/12/001
Publisher version: http://dx.doi.org/10.1088/0034-4885/44/12/001
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/80882
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