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Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots

Ramsay, AJ; Gopal, A; Gauger, EM; Nazir, A; Lovett, BW; Fox, AM; Skolnick, MS; (2010) Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots. PHYS REV LETT , 104 (1) , Article 017402. 10.1103/PhysRevLett.104.017402. Green open access

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Abstract

We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.

Type: Article
Title: Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevLett.104.017402
Publisher version: http://dx.doi.org/10.1103/PhysRevLett.104.017402
Language: English
Additional information: © 2010 The American Physical Society
Keywords: SPIN
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/168774
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