STONEHAM, AM; (1981) NONRADIATIVE-TRANSITIONS IN SEMICONDUCTORS. REP PROG PHYS , 44 (12) 1251 - 1295. 10.1088/0034-4885/44/12/001.

Preview

PDF 0034-4885_44_12_001.pdf Download (3MB)

Abstract

Non-radiative transitions affect many aspects of semiconductor performance. Normally they reduce device efficiency by suppressing luminescence, creating defects, reducing carrier lifetimes, or enhancing diffusion during operation. The present review surveys both the theoretical and practical understanding of non-radiative transitions. It includes general theoretical results and the associated ideas, with the emphasis on phonon-induced and defect Auger processes. Most of the purely formal aspects are omitted, but the points of principle where uncertainties remain are discussed. The review also covers the relation between basic theoretical studies and practical applied work on device degradation. This includes a description of the atomic processes involved in the more important mechanism of device deterioration and the theoretical understanding of the mechanism of these underlying processes. Finally, there is a survey of models proposed for 'killer' centres.

Download activity - last month

Export as CSVXMLJSON

Download activity - last 12 months

Export as XMLCSVJSON

Downloads by country - last 12 months

Export as JSONCSVXML

Archive Staff Only

View Item