Stoneham, AM;
(1979)
Lattice dilatation of boron in silicon.
Physics Letters A
, 70
(1)
55 - 56.
10.1016/0375-9601(79)90326-8.
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Abstract
Recent data on laser-annealed, boron-implanted silicon are analysed, and the results compared with earlier experiments and simple theory. Each substitutional boron decreases the total volume by about 90% of the volume per silicon atom in the perfect crystal.
| Type: | Article |
|---|---|
| Title: | Lattice dilatation of boron in silicon |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1016/0375-9601(79)90326-8 |
| Publisher version: | http://dx.doi.org/10.1016/0375-9601(79)90326-8 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of Elsevier B.V., 2012 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/59765 |
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