STONEHAM, AM;
(1979)
PHONON COUPLING AND PHOTOIONIZATION CROSS-SECTIONS IN SEMICONDUCTORS.
J PHYS C SOLID STATE
, 12
(5)
891 - 897.
10.1088/0022-3719/12/5/018.
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Abstract
The coupling to lattice vibrations affects the photoionisation spectra of defects in semiconductors. This is especially important for deep defects. The effects are characterised mainly by a Huang-Rhys factor S0 and by a spectral moment. These are calculated for a variety of electron-photon coupling mechanisms as a function of the observable ionisation energy EI rather than the unobservable effective radius used by previous workers. For Frohlich coupling a good approximation for the Huang-Rhys factor is S0(x)/S0(0)=X/ square root ((5+x)/6) with x=EI/(effective Ryd for purely hydrogenic centre).
| Type: | Article |
|---|---|
| Title: | PHONON COUPLING AND PHOTOIONIZATION CROSS-SECTIONS IN SEMICONDUCTORS |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0022-3719/12/5/018 |
| Publisher version: | http://dx.doi.org/10.1088/0022-3719/12/5/018 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/59700 |
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