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DISTRIBUTIONS OF RANDOM-FIELDS IN SOLIDS - CONTRIBUTION OF THE NEAREST DEFECT

STONEHAM, AM; (1983) DISTRIBUTIONS OF RANDOM-FIELDS IN SOLIDS - CONTRIBUTION OF THE NEAREST DEFECT. J PHYS C SOLID STATE , 16 (2) 285 - 293. 10.1088/0022-3719/16/2/012. Green open access

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Abstract

Discusses the statistical distribution of internal fields due to random defects in solids. It extends previous discussions by separating explicitly the contribution of the nearest defect from that due to all others. Possible applications include those to preferential defect pairing, to hopping conduction in randomly doped crystals, and to questions of the existence of phase transitions in random dipole systems. As a by-product, it is noted that the random strains in solids have a statistically negligible probability of localising a muon (assumed not self-trapped) except at the sites of defects themselves.

Type: Article
Title: DISTRIBUTIONS OF RANDOM-FIELDS IN SOLIDS - CONTRIBUTION OF THE NEAREST DEFECT
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/0022-3719/16/2/012
Publisher version: http://dx.doi.org/10.1088/0022-3719/16/2/012
Language: English
Additional information: Text made available to UCL Discovery by kind permission of IOP Publishing, 2012
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
URI: https://discovery.ucl.ac.uk/id/eprint/59690
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