STONEHAM, AM;
(1983)
DISTRIBUTIONS OF RANDOM-FIELDS IN SOLIDS - CONTRIBUTION OF THE NEAREST DEFECT.
J PHYS C SOLID STATE
, 16
(2)
285 - 293.
10.1088/0022-3719/16/2/012.
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Abstract
Discusses the statistical distribution of internal fields due to random defects in solids. It extends previous discussions by separating explicitly the contribution of the nearest defect from that due to all others. Possible applications include those to preferential defect pairing, to hopping conduction in randomly doped crystals, and to questions of the existence of phase transitions in random dipole systems. As a by-product, it is noted that the random strains in solids have a statistically negligible probability of localising a muon (assumed not self-trapped) except at the sites of defects themselves.
| Type: | Article |
|---|---|
| Title: | DISTRIBUTIONS OF RANDOM-FIELDS IN SOLIDS - CONTRIBUTION OF THE NEAREST DEFECT |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0022-3719/16/2/012 |
| Publisher version: | http://dx.doi.org/10.1088/0022-3719/16/2/012 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/59690 |
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