STONEHAM, AM;
PAJOT, B;
SCHOBER, HR;
(1988)
LOCAL DISTORTIONS AND VOLUME CHANGES IN SEMICONDUCTORS - DONORS IN SILICON.
J PHYS C SOLID STATE
, 21
(26)
4687 - 4692.
10.1088/0022-3719/21/26/016.
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Abstract
Experiments giving impurity-induced lattice distortion can measure quite distinct quantities. In particular EXAFS (extended X-ray fine structure) measures nearest-neighbour distances, whereas both volume changes and recent spectroscopic data measure long-range displacements. The relationship between the two depends strongly on the inter-atomic potential. The authors analyse this for impurities in silicon by adopting a variety of current potentials. There is a significant contradiction between the EXAFS results and the other experiments for all of the inter-atomic potentials. This problem may be associated with the high oxygen concentrations of Czochralski crystals used in the EXAFS study.
| Type: | Article |
|---|---|
| Title: | LOCAL DISTORTIONS AND VOLUME CHANGES IN SEMICONDUCTORS - DONORS IN SILICON |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1088/0022-3719/21/26/016 |
| Publisher version: | http://dx.doi.org/10.1088/0022-3719/21/26/016 |
| Language: | English |
| Additional information: | Text made available to UCL Discovery by kind permission of IOP Publishing, 2012 |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/59650 |
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