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Nonradiative Step Facets in Semiconductor Nanowires

Sanchez, AM; Zhang, Y; Tait, EW; Hine, NDM; Liu, H; Beanland, R; (2017) Nonradiative Step Facets in Semiconductor Nanowires. Nano Letters , 17 (4) pp. 2454-2459. 10.1021/acs.nanolett.7b00123. Green open access

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Abstract

One of the main advantages of nanowires for functional applications is their high perfection, which results from surface image forces that act on line defects such as dislocations, rendering them unstable and driving them out of the crystal. Here we show that there is a class of step facets that are stable in nanowires, with no long-range strain field or dislocation character. In zinc-blende semiconductors, they take the form of Σ3 (112) facets with heights constrained to be a multiple of three {111} monolayers. Density functional theory calculations show that they act as nonradiative recombination centers and have deleterious effects on nanowire properties. We present experimental observations of these defects on twin boundaries and twins that terminate inside GaAsP nanowires and find that they are indeed always multiples of three monolayers in height. Strategies to use the three-monolayer rule during growth to prevent their formation are discussed.

Type: Article
Title: Nonradiative Step Facets in Semiconductor Nanowires
Open access status: An open access version is available from UCL Discovery
DOI: 10.1021/acs.nanolett.7b00123
Publisher version: http://doi.org/10.1021/acs.nanolett.7b00123
Language: English
Additional information: Copyright © 2017 American Chemical Society. This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Chemistry, Physical, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Chemistry, Science & Technology - Other Topics, Materials Science, Physics, Nanowire, defects, STEM, DFT, step facets, GRAIN-BOUNDARIES, GAASP NANOWIRES, TWIN BOUNDARIES, SILICON, SIGMA=3, EPITAXY
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1576339
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