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Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers

Kim, D; Tang, M; Wu, J; Hatch, S; Maidaniuk, Y; Dorogan, V; Mazur, YI; ... Liu, H; + view all (2017) Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers. In: Fernandez, A, (ed.) Proceedings of the E3S Web of Conferences. (pp. p. 16001). EDP Sciences Green open access

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Abstract

In this work, the effect of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers is studied. The AlAs cap layers suppress the formation of the wetting layer during quantum dot growth. This helps achieve quantum dot state filling, which is one of the requirements for strong sub-bandgap photon absorption in the quantum dot intermediate band solar cell, at lower Si doping density. Furthermore, the passivation of defect states in the quantum dots with moderate Si doping is demonstrated, which leads to an enhancement of the carrier lifetime in the quantum dots, and hence the open-circuit voltage.

Type: Proceedings paper
Title: Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers
Event: 11th European Space Power Conference (ESPC)
Location: Thessaloniki, GREECE
Dates: 03 October 2016 - 07 October 2016
Open access status: An open access version is available from UCL Discovery
DOI: 10.1051/e3sconf/20171616001
Publisher version: http://dx.doi.org/10.1051/e3sconf/20171616001
Language: English
Additional information: © The Authors, published by EDP Sciences. This is an open access article distributed under the terms of the Creative Commons Attribution License 4.0 (http://creativecommons.org/licenses/by/4.0/).
Keywords: Intermediate-band, growth-temperature, detailed balance, spacer layer, efficiency, gaas
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1573453
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