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Integrating III-V quantum dot lasers on silicon substrates for silicon photonics

Liao, M; Chen, S; Tang, M; Wu, J; Li, W; Kennedy, K; Ross, I; ... Liu, H; + view all (2017) Integrating III-V quantum dot lasers on silicon substrates for silicon photonics. In: Reed, GT and Knights, AP, (eds.) Silicon Photonics XII. (pp. 101081A1-101081A8). Society of Photo-Optical Instrumentation Engineers (SPIE) Green open access

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Abstract

The realization of efficient III-V lasers directly grown on Si substrates is highly desirable for large-scale and low-cost silicon based optoelectronic integrated circuits. However, it has been hindered by the high threading dislocation (TD) density generated at the interface between III-V compounds and Si substrates. Introducing dislocation filter layers (DFLs) to suppress the TD propagation into the active region becomes a key factor for realising lasers with advanced performance. In this paper, optimization of InGaAs/GaAs DFLs in III-V quantum dot (QD) lasers on Si is demonstrated. Based on these optimized DFLs and other strategies, we have achieved a high performance electrically pumped QD laser on a Si substrate with threshold current density of 62.5 A cm-2, over 105 mW output power, maximum operation temperature of 120 °C and over 100,158 h of extrapolated lifetime.

Type: Proceedings paper
Title: Integrating III-V quantum dot lasers on silicon substrates for silicon photonics
Event: SPIE Photonics West - OPTO 2017
Location: San Francisco, California, United States
Dates: 28 January 2017 - 02 February 2017
ISBN-13: 9781510606586
Open access status: An open access version is available from UCL Discovery
DOI: 10.1117/12.2249761
Publisher version: http://doi.org/10.1117/12.2249761
Language: English
Additional information: © (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, Molecular beam epitaxy, quantum dots, lasers, silicon photonics
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1571456
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