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Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band

Orchard, JR; Woodhead, C; Wu, J; Tang, M; Beanland, R; Noori, Y; Liu, H; ... Mowbray, DJ; + view all (2017) Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band. ACS Photonics , 4 (7) pp. 1740-1746. 10.1021/acsphotonics.7b00276. Green open access

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Abstract

We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

Type: Article
Title: Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band
Open access status: An open access version is available from UCL Discovery
DOI: 10.1021/acsphotonics.7b00276
Publisher version: http://dx.doi.org/10.1021/acsphotonics.7b00276
Language: English
Additional information: This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Keywords: C-band; GaAsSb; III−V semiconductors; quantum dots; Si substrate; single-photon sources
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1570277
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