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Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer

Jurczak, P; Zhang, Y; Wu, J; Sanchez, AM; Aagesen, M; Liu, H; (2017) Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer. Nano Letters , 17 (6) pp. 3629-3633. 10.1021/acs.nanolett.7b00803. Green open access

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Abstract

In this Letter, we demonstrate that a significant improvement of optical performance of InAs nanowires can be achieved by capping the core InAs nanowires with a thin InP shell, which successfully passivates the surface states reducing the rate of nonradiative recombination. The improvements have been confirmed by detailed photoluminescence measurements, which showed up to a 10-fold increase in the intensity of room-temperature photoluminescence from the capped InAs/InP nanowires compared to the sample with core-only InAs nanowires. Moreover, the nanowires exhibit a high stability of total photoluminescence emission strength across temperature range from 10 to 300 K as a result of strong quantum confinement. These findings could be the key to successful implementation of InAs nanowires into optoelectronic devices.

Type: Article
Title: Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer
Open access status: An open access version is available from UCL Discovery
DOI: 10.1021/acs.nanolett.7b00803
Publisher version: http://doi.org/10.1021/acs.nanolett.7b00803
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Physical Sciences, Technology, Chemistry, Multidisciplinary, Chemistry, Physical, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Chemistry, Science & Technology - Other Topics, Materials Science, Physics, Nanowires, InAs, self-catalyzed, photoluminescence, III-V NANOWIRES, QUANTUM DOTS, ELECTRON-MOBILITY, BUILDING-BLOCKS, SOLAR-CELLS, SILICON, DEVICES, TRANSISTORS, TRANSPORT, SEMICONDUCTOR
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1566371
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