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Impact of the growth temperature on the performance of 1.70-eV Al 0.22 Ga 0.78 As solar cells grown by MBE

Onno, A; Tang, M; Oberbeck, L; Wu, J; Liu, H; (2017) Impact of the growth temperature on the performance of 1.70-eV Al 0.22 Ga 0.78 As solar cells grown by MBE. Journal of Crystal Growth , 475 pp. 322-327. 10.1016/j.jcrysgro.2017.07.011. Green open access

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Abstract

Growth of high material quality Aluminum Gallium Arsenide (AlxGa1-xAs) is known to be challenging, in particular with an Al content x above 20%. As a result, the use of AlxGa1-xAs in devices requiring high minority carrier lifetimes, such as solar cells, has been limited. Nonetheless, it has long been established that the substrate temperature is a key parameter in improving AlxGa1-xAs material quality. In order to optimize the growth temperature of 1.70-eV Al0.22Ga0.78As solar cells, five samples have been grown by Solid-Source Molecular Beam Epitaxy (SSMBE) at 580 °C, 600 °C, 620 °C, 640 °C, and 660 °C, respectively. A strong improvement in performance is observed with increasing the growth temperature from 580 °C to 620 °C. An open-circuit voltage above 1.21 V has in particular been demonstrated on the sample grown at 620 °C, translating into a bandgap-voltage offset Woc below 0.5 V. Above 620 °C, performances – in particular the short-circuit current density – moderately decrease. This trend is confirmed by photoluminescence, current density versus voltage characterization under illumination, and external quantum efficiency measurements.

Type: Article
Title: Impact of the growth temperature on the performance of 1.70-eV Al 0.22 Ga 0.78 As solar cells grown by MBE
Open access status: An open access version is available from UCL Discovery
DOI: 10.1016/j.jcrysgro.2017.07.011
Publisher version: http://doi.org/10.1016/j.jcrysgro.2017.07.011
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: B2. Aluminum Gallium Arsenide; B3. Solar cells; A3. Molecular Beam Epitaxy; A3. Growth temperature
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1565499
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