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Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells

Kondratenko, S; Yakovliev, A; Iliash, S; Mazur, Y; Ware, M; Lam, P; Tang, M; ... Salamo, G; + view all (2017) Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells. Journal of Physics D: Applied Physics , 50 (16) , Article 165101. 10.1088/1361-6463/aa61d4. Green open access

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Abstract

Selective doping of quantum dots is often used to improve efficiency of intermediate band solar cells (IBSC) due to IR harvesting and built-in-dot charge. To investigate the effects of the built-in-dot charge on recombination processes and device performance InAs/GaAs quantum dot IBSCs with direct Si doping in the quantum dots are fabricated, and the I–V characteristics and transients of the open circuit voltage and short circuit current are measured. The decay times of both the open circuit voltage and the short circuit current increase as the concentration of n-type doping increases in the quantum dots. The observed increase in the charge carrier lifetime is attributed to suppressed recombination of electron–hole pairs through the states of quantum dots and shrinking the depletion layer. This is supported by measurements of both photovoltage and photoluminescence spectra.

Type: Article
Title: Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells
Open access status: An open access version is available from UCL Discovery
DOI: 10.1088/1361-6463/aa61d4
Publisher version: http://dx.doi.org/10.1088/1361-6463/aa61d4
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: science & technology, physical sciences, physics, applied, physics, quantum dots, solar cells, III-V semiconductors, carrier lifetime, recombination processes, intermediate-band, carrier emission, spectroscopy, efficiency, semiconductors, dependence, voltage
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1555789
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