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Electrically pumped continuous-wave 1.3 mu m InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

Chen, S; Liao, M; Tang, M; Wu, J; Martin, M; Baron, T; Seeds, A; (2017) Electrically pumped continuous-wave 1.3 mu m InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates. Optics Express , 25 (5) pp. 4632-4639. 10.1364/OE.25.004632. Green open access

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Abstract

We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers. A 400 nm antiphase boundary (APB) free epitaxial GaAs film with a small root-mean-square (RMS) surface roughness of 0.86 nm was first deposited on a 300 mm standard industry-compatible on-axis Si (001) substrate by metal-organic chemical vapor deposition (MOCVD). The QD laser structure was then grown on this APB-free GaAs/Si (001) virtual substrate by molecular beam epitaxy (MBE). Room-temperature cw lasing at ~1.3 µm has been achieved with a threshold current density of 425 A/cm2 and single facet output power of 43 mW. Under pulsed operation, lasing operation up to 102 °C has been realized, with a threshold current density of 250 A/cm2 and single facet output power exceeding 130 mW at room temperature.

Type: Article
Title: Electrically pumped continuous-wave 1.3 mu m InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates
Open access status: An open access version is available from UCL Discovery
DOI: 10.1364/OE.25.004632
Publisher version: http://dx.doi.org/10.1364/OE.25.004632
Language: English
Additional information: Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Keywords: Science & Technology, Physical Sciences, Optics, SILICON PHOTONICS, GE SUBSTRATE, DIODE, PERFORMANCE, THRESHOLD, LAYERS
UCL classification: UCL
UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1553569
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