Butler, JE;
Vikharev, A;
Gorbachev, A;
Lobaev, M;
Muchnikov, A;
Radischev, D;
Isaev, V;
... Jackman, RB; + view all
(2016)
Nanometric diamond delta doping with boron.
Physica Status Solidi (RRL) - Rapid Research Letters
, 11
(1)
10.1002/pssr.201600329.
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Abstract
Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm2/Vs and sheet carrier concentrations to 6 × 1013 cm–2, thus enabling a new class of active diamond electronic devices.
| Type: | Article |
|---|---|
| Title: | Nanometric diamond delta doping with boron |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1002/pssr.201600329 |
| Publisher version: | http://doi.org/10.1002/pssr.201600329 |
| Language: | English |
| Additional information: | This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions. |
| Keywords: | Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, diamond, boron, delta doping, carrier mobility, Hall effect, growth, DOPED DIAMOND, DEPTH RESOLUTION, DEVICES |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1536534 |
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