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Long lifetime quantum-dot laser monolithically grown on silicon

Chen, S; Wu, J; Tang, M; Liao, M; Liu, H; (2016) Long lifetime quantum-dot laser monolithically grown on silicon. In: Proceedings of IEEE 13th International Conference on Group IV Photonics (GFP). (pp. pp. 147-148). IEEE: Shanghai, China. Green open access

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Abstract

Monolithically integrating III-V lasers on Si is the most promising solution to overcome the lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications-wavelength InAs/GaAs quantum dot lasers with low threshold current density, high output power, and long lifetime.

Type: Proceedings paper
Title: Long lifetime quantum-dot laser monolithically grown on silicon
Event: IEEE 13th International Conference on Group IV Photonics (GFP)
Location: Shanghai, PEOPLES R CHINA
Dates: 24 August 2016 - 26 August 2016
ISBN-13: 9781509019038
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/GROUP4.2016.7739099
Publisher version: https://doi.org/10.1109/GROUP4.2016.7739099
Language: English
Additional information: Copyright © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Keywords: Silicon, Substrates, Gallium arsenide, Quantum dot lasers, Photonics, Quantum well lasers
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1534705
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