Chen, S;
Wu, J;
Tang, M;
Liao, M;
Liu, H;
(2016)
Long lifetime quantum-dot laser monolithically grown on silicon.
In:
Proceedings of IEEE 13th International Conference on Group IV Photonics (GFP).
(pp. pp. 147-148).
IEEE: Shanghai, China.
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Abstract
Monolithically integrating III-V lasers on Si is the most promising solution to overcome the lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications-wavelength InAs/GaAs quantum dot lasers with low threshold current density, high output power, and long lifetime.
| Type: | Proceedings paper |
|---|---|
| Title: | Long lifetime quantum-dot laser monolithically grown on silicon |
| Event: | IEEE 13th International Conference on Group IV Photonics (GFP) |
| Location: | Shanghai, PEOPLES R CHINA |
| Dates: | 24 August 2016 - 26 August 2016 |
| ISBN-13: | 9781509019038 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1109/GROUP4.2016.7739099 |
| Publisher version: | https://doi.org/10.1109/GROUP4.2016.7739099 |
| Language: | English |
| Additional information: | Copyright © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Keywords: | Silicon, Substrates, Gallium arsenide, Quantum dot lasers, Photonics, Quantum well lasers |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1534705 |
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