Onno, A;
Wu, J;
Jiang, Q;
Chen, S;
Tang, M;
Maidaniuk, Y;
Benamara, M;
... Liu, H; + view all
(2016)
Al0.2Ga0.8As solar cells monolithically grown on Si and GaAs by MBE for III-V/Si tandem dual-junction applications.
In: Ribeyron, PJ and Cuevas, A and Weeber, A and Ballif, C and Glunz, S and Poortmans, J and Brendel, R and Aberle, A and Sinton, R and Verlinden, P and Hahn, G, (eds.)
Energy Procedia.
(pp. pp. 661-668).
Elsevier
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Abstract
Al0.2Ga0.8As photovoltaic solar cells have been monolithically grown on silicon substrates by Molecular Beam Epitaxy. Due to the 4% lattice mismatch between AlGaAs and Si, Threading Dislocations (TDs) nucleate at the III-V/Si interface and propagate to the active region of the cells where they act as recombination centers, reducing the performances of the devices. In order to reduce the Threading Dislocation Density (TDD) in the active layers of the cells, InAlAs Strained Layer Superlattice (SLS) Dislocation Filter Layers (DFLs) have been used. For one of the samples, in-situ Thermal Cycle Annealing (TCA) steps have additionally been performed during growth. For comparison purposes, reference Al0.2Ga0.8As solar cells have been grown lattice-matched on GaAs. For the sample grown on Si without TCA, the TDD has been reduced from over 7×109cm-2 at the III-V/Si interface to 3×107cm-2 in the base of the cells. With TCA, the TDD has been reduced throughout the sample from over 3×109cm-2 in the initial epilayers to 8(±2)×106cm-2 in the base of the cells. For the best devices, the Voc improves from 833mV on Si without TCA to 895mV using TCA, compared with 1070mV for the reference sample grown lattice-matched on GaAs. Similarly the fill factor improves from 73.7% on Si without TCA to 74.8% using TCA, compared with 78.4% on GaAs. The high bandgap-voltage offset obtained both on Si and GaAs indicates a non-optimal bulk AlGaAs material quality due to non-ideal growth conditions.
| Type: | Proceedings paper |
|---|---|
| Title: | Al0.2Ga0.8As solar cells monolithically grown on Si and GaAs by MBE for III-V/Si tandem dual-junction applications |
| Event: | 6th International Conference on Crystalline Silicon Photovoltaics (SiliconPV) |
| Location: | CEA INES, Chambery, FRANCE |
| Dates: | 07 March 2016 - 09 March 2016 |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1016/j.egypro.2016.07.037 |
| Publisher version: | http://dx.doi.org/10.1016/j.egypro.2016.07.037 |
| Language: | English |
| Additional information: | Copyright © 2016 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/). Peer review by the scientific conference committee of SiliconPV 2016 under responsibility of PSE AG. doi: 10.1016/j.egypro.2016.07.037 |
| Keywords: | III-V on silicon; AlGaAs solar cell; MBE; Threading dislocation density; Dislocation filter; Thermal cycle annealing |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1507846 |
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