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Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates

Tang, M; Chen, S; Wu, J; Jiang, Q; Kennedy, K; Jurczak, P; Liao, M; ... Liu, H; + view all (2016) Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates. IEEE Journal of Selected Topics in Quantum Electronics , 22 (6) , Article 1900207. 10.1109/JSTQE.2016.2551941. Green open access

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Abstract

III-V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III-V and Si generates a high density of threading dislocations (TDs) at the interface between III-V and Si. Some of these TD will propagate into the III-V active region and lead to device degradation. By introducing defect filter layers (DFLs), the density of TDs propagating into the III-V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.

Type: Article
Title: Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/JSTQE.2016.2551941
Publisher version: http://dx.doi.org/10.1109/JSTQE.2016.2551941
Language: English
Additional information: This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1505860
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