Tang, M;
Chen, S;
Wu, J;
Jiang, Q;
Kennedy, K;
Jurczak, P;
Liao, M;
... Liu, H; + view all
(2016)
Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates.
IEEE Journal of Selected Topics in Quantum Electronics
, 22
(6)
, Article 1900207. 10.1109/JSTQE.2016.2551941.
Preview |
Text
07451187.pdf - Published Version Download (2MB) | Preview |
Abstract
III-V semiconductors monolithically grown on Si substrates are expected to be an ideal solution to integrate highly efficient light-emitting devices on a Si platform. However, the lattice mismatch between III-V and Si generates a high density of threading dislocations (TDs) at the interface between III-V and Si. Some of these TD will propagate into the III-V active region and lead to device degradation. By introducing defect filter layers (DFLs), the density of TDs propagating into the III-V layers can be significantly reduced. In this paper, we present an investigation on the development of InGaAs/GaAs strained-layer superlattices as DFLs for 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on a Si substrate. We compare two broad-area InAs/GaAs quantum-dot lasers with non-optimized and optimized InGaAs/GaAs DFLs. The laser device with optimal DFLs has a lower room-temperature threshold current density of 99 A/cm2 and higher maximum operation temperature of 88 °C, compared with 174 A/cm2 and 68 °C for the reference laser.
Type: | Article |
---|---|
Title: | Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1109/JSTQE.2016.2551941 |
Publisher version: | http://dx.doi.org/10.1109/JSTQE.2016.2551941 |
Language: | English |
Additional information: | This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/ |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
URI: | https://discovery.ucl.ac.uk/id/eprint/1505860 |




Archive Staff Only
![]() |
View Item |