Jambois, O;
Berencen, Y;
Hijazi, K;
Wojdak, M;
Kenyon, AJ;
Gourbilleau, F;
Rizk, R;
(2009)
Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions.
Journal of Applied Physics
, 106
(6)
, Article 063526. 10.1063/1.3213386.
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Abstract
We have studied the current transport and electroluminescence properties of metal oxide semiconductor (MOS) devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10(-3)%. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3213386]
| Type: | Article |
|---|---|
| Title: | Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1063/1.3213386 |
| Publisher version: | http://dx.doi.org/10.1063/1.3213386 |
| Language: | English |
| Additional information: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Jambois, O and Berencen, Y and Hijazi, K and Wojdak, M and Kenyon, AJ and Gourbilleau, F and Rizk, R and Garrido, B (2009) Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions. Journal of Applied Physics, 106 (6), Article 063526 and may be found at http://link.aip.org/link/?jap/106/063526 |
| Keywords: | 1.54 MU-M, SILICON NANOCRYSTALS, ENERGY-TRANSFER, EMISSION, DEVICES |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/149152 |
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