UCL Discovery
UCL home » Library Services » Electronic resources » UCL Discovery

Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Ahmad, I; Temple, MP; Kallis, A; Wojdak, M; Oton, CJ; Barbier, D; Saleh, H; ... Loh, WH; + view all (2008) Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters. Journal of Applied Physics , 104 (12) , Article 123108. 10.1063/1.3050324. Green open access

[thumbnail of 149090_JAP 104-123108 STRESS 2008.pdf]
Preview
PDF
149090_JAP 104-123108 STRESS 2008.pdf
Available under License : See the attached licence file.

Download (481kB)

Abstract

Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.

Type: Article
Title: Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters
Open access status: An open access version is available from UCL Discovery
DOI: 10.1063/1.3050324
Publisher version: http://dx.doi.org/10.1063/1.3050324
Language: English
Additional information: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Ahmad, I and Temple, MP and Kallis, A and Wojdak, M and Oton, CJ and Barbier, D and Saleh, H and Kenyon, AJ and Loh, WH (2008) Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters. Journal of Applied Physics, 104 (12) , Article 123108 and may be found at http://link.aip.org/link/?jap/104/123108
Keywords: annealing, compressive strength, cracks, erbium, internal stresses, nanostructured materials, nanotechnology, optical films, photoluminescence, plasma CVD, silicon compounds, tensile strength, 1.54 MU-M, OPTICAL WAVE-GUIDES, ENERGY-TRANSFER, RICH SILICA, THIN-FILMS, M PHOTOLUMINESCENCE, SI NANOCRYSTALS, EXCITATION, HYDROGEN, DEPOSITION
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/149090
Downloads since deposit
174Downloads
Download activity - last month
Download activity - last 12 months
Downloads by country - last 12 months

Archive Staff Only

View Item View Item