Ahmad, I;
Temple, MP;
Kallis, A;
Wojdak, M;
Oton, CJ;
Barbier, D;
Saleh, H;
... Loh, WH; + view all
(2008)
Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters.
Journal of Applied Physics
, 104
(12)
, Article 123108. 10.1063/1.3050324.
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Abstract
Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.
| Type: | Article |
|---|---|
| Title: | Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1063/1.3050324 |
| Publisher version: | http://dx.doi.org/10.1063/1.3050324 |
| Language: | English |
| Additional information: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Ahmad, I and Temple, MP and Kallis, A and Wojdak, M and Oton, CJ and Barbier, D and Saleh, H and Kenyon, AJ and Loh, WH (2008) Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters. Journal of Applied Physics, 104 (12) , Article 123108 and may be found at http://link.aip.org/link/?jap/104/123108 |
| Keywords: | annealing, compressive strength, cracks, erbium, internal stresses, nanostructured materials, nanotechnology, optical films, photoluminescence, plasma CVD, silicon compounds, tensile strength, 1.54 MU-M, OPTICAL WAVE-GUIDES, ENERGY-TRANSFER, RICH SILICA, THIN-FILMS, M PHOTOLUMINESCENCE, SI NANOCRYSTALS, EXCITATION, HYDROGEN, DEPOSITION |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/149090 |
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