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Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

Mohandas, RA; Freeman, JR; Rosamond, MC; Hatem, O; Chowdhury, S; Ponnampalam, L; Fice, M; ... Dean, P; + view all (2016) Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP. Journal of Applied Physics , 119 (15) , Article 153103. 10.1063/1.4946845. Green open access

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Abstract

We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.

Type: Article
Title: Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP
Open access status: An open access version is available from UCL Discovery
DOI: 10.1063/1.4946845
Publisher version: http://dx.doi.org/10.1063/1.4946845
Language: English
Additional information: The following article appeared in the Journal of Applied Physics [Mohandas, RA; Freeman, JR; Rosamond, MC; Hatem, O; Chowdhury, S; Ponnampalam, L; Fice, M; (2016) Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP. Journal of Applied Physics , 119 (15), Article 153103. 10.1063/1.4946845] and may be found at http://dx.doi.org/10.1063/1.4946845. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1487724
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