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Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers

Kim, D; Tang, M; Wu, J; Hatch, S; Maidaniuk, Y; Dorogan, V; Mazur, YI; (2016) Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers. IEEE Journal of Photovoltaics , 6 (4) pp. 906-911. 10.1109/JPHOTOV.2016.2547581. Green open access

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Abstract

One of the requirements for strong subbandgap photon absorption in the quantum-dot intermediate-band solar cell (QD-IBSC) is the partial filling of the intermediate band. Studies have shown that the partial filling of the intermediate band can be achieved by introducing Si doping to the QDs. However, the existence of too many Si dopants leads to the formation of point defects and, hence, a reduction of photocurrent. In this study, the effect of Si doping on InAs/GaAs QD solar cells with AlAs cap layers is studied. The AlAs cap layers prevent the formation of the wetting layer during QD growth and reduce the Si doping density needed to achieve QD state filling. Furthermore, the passivation of defect states in the QD with moderate Si doping is demonstrated, which leads to an enhancement of the carrier lifetime in the QDs and, hence, the open-circuit voltage.

Type: Article
Title: Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers
Location: US
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/JPHOTOV.2016.2547581
Publisher version: http://dx.doi.org/10.1109/JPHOTOV.2016.2547581
Language: English
Additional information: This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/.
Keywords: Intermediate-band solar cells (IBSCs), Molecular beam epitaxy (MBE), Quantum-dot (QD) solar cells
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1482146
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