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A solution based route to GaAs thin films from As(NMe2)(3) and GaMe3 for solar cells

Sathasivam, S; Arnepalli, RR; Singh, KK; Visser, RJ; Blackman, CS; Carmalt, CJ; (2015) A solution based route to GaAs thin films from As(NMe2)(3) and GaMe3 for solar cells. RSC Advances , 5 (16) pp. 11812-11817. 10.1039/c4ra13902j. Green open access

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Abstract

The novel deposition of GaAs thin films on glass substrates from a solution based route involving the aerosol assisted chemical vapour deposition (AACVD) of As(NMe2)3 and GaMe3 dissolved in toluene is reported. The gallium arsenide films were analysed by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Powder XRD showed that cubic polycrystalline GaAs had been deposited with films grown at the higher temperatures having a Ga to As ratio of 1 : 1. EDX mapping, XPS depth profiling and SIMS showed that the films contained low levels of contaminants. The method described shows the formation of GaAs films with increasing crystallinity and stoichiometry reaching unity with increasing deposition temperature.

Type: Article
Title: A solution based route to GaAs thin films from As(NMe2)(3) and GaMe3 for solar cells
Open access status: An open access version is available from UCL Discovery
DOI: 10.1039/c4ra13902j
Publisher version: http://dx.doi.org/10.1039/c4ra13902j
Language: English
Keywords: Gallium arsenide, AACVD, solution processing, photovoltaics
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Chemistry
URI: https://discovery.ucl.ac.uk/id/eprint/1465913
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