Nikitichev, DI;
Ding, Y;
Ruiz, M;
Calligaro, M;
Michel, N;
Krakowski, M;
Krestnikov, I;
... Rafailov, EU; + view all
(2011)
High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers.
Applied Physics B
, 103
(3)
609 - 613.
10.1007/s00340-010-4290-5.
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Abstract
We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their active layer is also presented.
Type: | Article |
---|---|
Title: | High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1007/s00340-010-4290-5 |
Publisher version: | http://dx.doi.org/10.1007/s00340-010-4290-5 |
Language: | English |
Additional information: | The final publication is available at Springer via http://dx.doi.org/10.1007/s00340-010-4290-5. |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Mechanical Engineering |
URI: | https://discovery.ucl.ac.uk/id/eprint/1462809 |
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