Hepplestone, SP;
Sushko, PV;
(2014)
Effect of metal intermixing on the Schottky barriers of Mo(100)/GaAs(100) interfaces.
JOURNAL OF APPLIED PHYSICS
, 116
(19)
, Article ARTN 193703. 10.1063/1.4902009.
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Abstract
he electronic and structural properties of Mo(100)/GaAs(100) interfaces and Mo diffusion into GaAs are explored using first principle calculations. Our results show that the interface undergoes substantial atomic rearrangement with respect to the bulk structures and the bilayer of the GaAs adjacent to the interface becomes conducting. We study the n-type Schottky barrier height's dependence on Mo interdiffusion in the GaAs, with values ranging from ∼0.9 eV to ∼1.39 eV. This range is caused by the diffusants acting as additional n–type doping at the surface and their interaction with the metal-induced gap states.
| Type: | Article |
|---|---|
| Title: | Effect of metal intermixing on the Schottky barriers of Mo(100)/GaAs(100) interfaces |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1063/1.4902009 |
| Publisher version: | http://dx.doi.org/10.1063/1.4902009 |
| Additional information: | © 2014 The Author(s). Published through AIP's Author Select initiative under the terms of the Creative Commons 3.0 Unported License. |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1459452 |
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