Chen, S;
Tang, M;
Wu, J;
Jiang, Q;
Dorogan, V;
Benamara, M;
Mazur, Y;
... Liu, H; + view all
(2014)
1.3-μm InAs/GaAs quantum-dot laser monolithically grown on Si Substrates operating over 100°C.
Electronics Letters
, 50
(20)
pp. 1467-1468.
10.1049/el.2014.2414.
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Abstract
A high-performance 1.3 μm InAs/GaAs quantum-dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained-layer superlattice serving as dislocation filter layers (DFLs). The Si-based laser achieves lasing operation up to 111°C with a threshold current density of 200 A/cm 2 and an output power exceeding 100 mW at room temperature.
| Type: | Article |
|---|---|
| Title: | 1.3-μm InAs/GaAs quantum-dot laser monolithically grown on Si Substrates operating over 100°C |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.1049/el.2014.2414 |
| Publisher version: | https://doi.org/10.1049/el.2014.2414 |
| Language: | English |
| Additional information: | This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/) |
| Keywords: | lasers, semiconductor lasers, semiconductor quantum dots, silicon photonics, molecular beam epitaxial growth |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/1446914 |
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