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1.3-μm InAs/GaAs quantum-dot laser monolithically grown on Si Substrates operating over 100°C

Chen, S; Tang, M; Wu, J; Jiang, Q; Dorogan, V; Benamara, M; Mazur, Y; ... Liu, H; + view all (2014) 1.3-μm InAs/GaAs quantum-dot laser monolithically grown on Si Substrates operating over 100°C. Electronics Letters , 50 (20) pp. 1467-1468. 10.1049/el.2014.2414. Green open access

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Abstract

A high-performance 1.3 μm InAs/GaAs quantum-dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained-layer superlattice serving as dislocation filter layers (DFLs). The Si-based laser achieves lasing operation up to 111°C with a threshold current density of 200 A/cm 2 and an output power exceeding 100 mW at room temperature.

Type: Article
Title: 1.3-μm InAs/GaAs quantum-dot laser monolithically grown on Si Substrates operating over 100°C
Open access status: An open access version is available from UCL Discovery
DOI: 10.1049/el.2014.2414
Publisher version: http://dx.doi.org/10.1049/el.2014.2414
Language: English
Additional information: This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/)
Keywords: lasers, semiconductor lasers, semiconductor quantum dots, silicon photonics, molecular beam epitaxial growth
UCL classification: UCL
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: https://discovery.ucl.ac.uk/id/eprint/1446914
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