Smith, R;
Brázdová, V;
Bowler, DR;
(2014)
Hydrogen adsorption and diffusion around Si(0 0 1)/Si(1 1 0) corners in nanostructures.
Journal of Physics: Condensed Matter
, 26
(29)
, Article 295301. 10.1088/0953-8984/26/29/295301.
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Abstract
While the diffusion of hydrogen on silicon surfaces has been relatively well characterized, both experimentally and theoretically, diffusion around corners between surfaces, as will be found on nanowires and nanostructures, has not been studied. Motivated by nanostructure fabrication by Patterned Atomic Layer Epitaxy, we present a density functional theory study of the diffusion of hydrogen around the edge formed by the orthogonal (0 0 1) and (1 1 0) surfaces in silicon. We find that the barrier from (0 0 1) to (1 1 0) is approximately 0.3 eV lower than from (1 1 0) to (0 0 1), and that it is comparable to diffusion between rows on a clean surface, with no significant effect on the hydrogen patterns at the growth temperatures used.
Type: | Article |
---|---|
Title: | Hydrogen adsorption and diffusion around Si(0 0 1)/Si(1 1 0) corners in nanostructures |
Location: | England |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1088/0953-8984/26/29/295301 |
Publisher version: | http://dx.doi.org/10.1088/0953-8984/26/29/295301 |
Language: | English |
Additional information: | Copyright © 2014 IOP Publishing Ltd. |
UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > Dept of Physics and Astronomy |
URI: | https://discovery.ucl.ac.uk/id/eprint/1443432 |



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