Morris, AJ; Needs, RJ; Salager, E; Grey, CP; Pickard, CJ; (2013) Lithiation of silicon via lithium Zintl-defect complexes from first principles. Physical review B , 87 (17) , Article 174108. 10.1103/PhysRevB.87.174108.

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Abstract

An extensive search for low-energy lithium defects in crystalline silicon using density-functional-theory methods and the ab initio random structure searching (AIRSS) method shows that the four-lithium-atom substitutional point defect is exceptionally stable. This defect consists of four lithium atoms with strong ionic bonds to the four under-coordinated atoms of a silicon vacancy defect, similar to the bonding of metal ions in Zintl phases. This complex is stable over a range of silicon environments, indicating that it may aid amorphization of crystalline silicon and form upon delithiation of the silicon anode of a Li-ion rechargeable battery.

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