PAJOT, B; STONEHAM, AM; (1987) A SPECTROSCOPIC INVESTIGATION OF THE LATTICE DISTORTION AT SUBSTITUTIONAL SITES FOR GROUP-V AND GROUP-VI DONORS IN SILICON. J PHYS C SOLID STATE , 20 (32) 5241 - 5252. 10.1088/0022-3719/20/32/010.

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Abstract

Differences between experimentally determined line spacings in the spectra of group V donors in silicon and the corresponding spaces from an effective-mass-theory model supply information on the local volume change produced when a group V atom replaces a silicon atom. The results show that the volume change is negative for phosphorus and positive for the other donors. For group VI neutral donor spectra, the same figures are found for S0 and Se0, as compared with P and As, respectively. This similarity is considered as experimental proof that isolated sulphur and selenium occupy substitutional sites in silicon. A spectroscopical argument is put forward that shows that if sulphur and selenium are substitutional, then tellurium must also be substitutional and the problems encountered in trying to obtain information on the structure of the chalcogen complexes by this technique are briefly discussed. The information obtained spectroscopically on the lattice distortion at the donor site are compared with recent calculations and with other experimental results.

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