Stoneham, AM;
(2002)
Why model high-k dielectrics?
Journal of Non-Crystalline Solids
, 303
(1)
114 - 122.
10.1016/S0022-3093(02)00966-3.
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Abstract
New dielectrics need more than a high dielectric constant. They need to satisfy various constraints concerning band offsets, limits on charge traps, processability, reproducibility, and stability against degradation and breakdown. It seems unlikely that purely empirical approaches will produce a dielectric which justifies major investment. I discuss some of the atomistic modelling which can aid selection, and which might indicate routes around some of the interface-related and defect-related problems. These include diffusion during processing or in operation, the use of interface engineering to adjust band offsets, and the issues of crystallinity and of stoichiometry. (C) 2002 Elsevier Science Ltd. All rights reserved.
Type: | Article |
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Title: | Why model high-k dielectrics? |
Open access status: | An open access version is available from UCL Discovery |
DOI: | 10.1016/S0022-3093(02)00966-3 |
Publisher version: | http://dx.doi.org/10.1016/S0022-3093(02)00966-3 |
Language: | English |
Additional information: | Text made available to UCL Discovery by kind permission of Elsevier B.V., 2012. The content of this volume of the Journal of Non-Crystalline Solids contains a large fraction of the papers presented at the symposium ‘High-k Gate Dielectrics’ organized for the European Materials Research Society Meeting held in Strasbourg, France, from 5 to 8 June 2001. |
Keywords: | SELF-TRAPPED EXCITON, SILICON OXIDATION, FORCE MICROSCOPY, BAND OFFSETS, DIFFUSION, HYDROGEN, OXIDES, AL2O3, EQUILIBRIA, DEUTERIUM |
UCL classification: | UCL UCL > Provost and Vice Provost Offices UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences |
URI: | https://discovery.ucl.ac.uk/id/eprint/129090 |
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